Herein, we have explored kagome-like S=1/2 spin lattice which is known to be an antiferromagnetic insulator with high degree of frustration (f = 20.5) and embedded it onto reduced graphene oxide (rGO) sheets resulting in the formation of a magnetic semiconductor. Kagome-like S=1/2 spin lattice was realized in clinoatacamite [Cu2(OH)3Cl], a naturally occurring mineral and it is synthesized for the first time at ambient pressure from Cu(I) precursor in a single pot along with graphene oxide (GO). Reduction of GO to rGO resulted in simultaneous oxidation of Cu(I) to Cu(II) which, in turn, is stabilized in the form of clinoatacamite onto the rGO sheets. The presence of rGO in the nanocomposite not only brought semiconductivity but also doubled the coercive field from HC u2248 1230 Oe (pristine clinoatacamite) to HC u2248 2500 Oe (clinoatacamite-rGO nanocomposite) ascribed to the surface anisotropy in the nanocomposite. The electrical response of clinoatacamite-rGO nanocomposite was recorded and a value of ~200 S/m-1 was evaluated at 300 K.