[EN] The lack of memory effect of silicon makes it unfeasible to store electronic data in photonics. Here we propose a nonvolatile readout photonic memory, which is electronically written/erased and optically read. The memory utilizes indium tin oxide as a floating gate and exploits its epsilon-near-zero regime and electro-optic activity. Extinction ratios greater than 10 dB in a bandwidth of 100 nm for a 5 mu m long memory are obtained. Furthermore, power consumption in the order of microwatts with retention times of about a decade have been predicted. The proposed structure opens a pathway for developing highly integrated electro-optic devices such as memory banks. (C) 2019 Optical Society of America. The authors thank Alba Vicente for her valuable comments. Ministerio de Economia y Competitividad (MINECO) (TEC2016-76849, TEC2017-92037-EXP); Ministerio de Educacion, Cultura y Deporte (MECD) (FPU17/04224); Universitat Politecnica de Valencia (UPV) (FPI-Irene Olivares). 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Non-volatile epsilon-near-zero readout memory

Abstract